3

On metal-insulator electronic phase transitions in semiconductors

Year:
2006
Language:
english
File:
PDF, 204 KB
english, 2006
4

Concept of mobility threshold: The Ioffe-Regel rule

Year:
2010
Language:
english
File:
PDF, 230 KB
english, 2010
7

Baric polymorphism: characteristic functions and critical indexes

Year:
2013
Language:
english
File:
PDF, 358 KB
english, 2013
15

The nature of “heavy” electrons in thep-HgTe zero-gap semiconductor

Year:
2009
Language:
english
File:
PDF, 240 KB
english, 2009
31

Electron Metal-Dielectric Phase Transitions in Semiconductors under Pressure

Year:
2004
Language:
english
File:
PDF, 229 KB
english, 2004
32

Heuristic approach to network database external parameters design

Year:
1985
Language:
english
File:
PDF, 558 KB
english, 1985
33

Quasi-gapless semiconductor:p-type indium arsenide

Year:
1999
Language:
english
File:
PDF, 78 KB
english, 1999
43

Effect of pressure on the electronic spectrum of indium arsenide

Year:
2011
Language:
english
File:
PDF, 254 KB
english, 2011